STP57N65M5 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

STP57N65M5

N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages

STMicroelectronics 

Electrical characteristics

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5

Figure 14. Source-drain diode forward

characteristics

Figure 15. Normalized BVDSS vs temperature

VSD

(V)

TJ=-50°C

1.2

1.0

AM05461v1

VDS

(norm)

1.08

1.06

1.04

ID = 1mA

AM10399v1

0.8

0.6

TJ=150°C

0.4

0.2

TJ=25°C

0

0 10 20 30 40 50 ISD(A)

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0

25 50 75 100 TJ(°C)

Figure 16. Switching losses vs gate resistance

(1)

E (μJ)

800

VDD=400V

VGS=10V

ID=28A

Eon

AM14712v1

600

Eoff

400

200

0

0

10

20

30

40

1. Eon including reverse recovery of a SiC diode

RG(Ω)

8/22

Doc ID 022849 Rev 4

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