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STW57N65M5_12 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STW57N65M5_12 Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 28 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max. Unit
73
ns
15
ns
-
-
12
ns
19
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 42 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 42 A, di/dt = 100 A/µs
-
VDD = 100 V (see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 42 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
-
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
42 A
168 A
1.5 V
418
ns
8
µC
40
A
528
ns
12
µC
44
A
Doc ID 022849 Rev 4
5/22
 

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