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STW57N65M5_12 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STW57N65M5_12 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW57N65M5_12 Datasheet PDF : 22 Pages
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STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 28 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max. Unit
73
ns
15
ns
-
-
12
ns
19
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 42 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 42 A, di/dt = 100 A/µs
-
VDD = 100 V (see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 42 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
-
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
42 A
168 A
1.5 V
418
ns
8
µC
40
A
528
ns
12
µC
44
A
Doc ID 022849 Rev 4
5/22
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