STP57N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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STP57N65M5
STMicroelectronics
| STP57N65M5 Datasheet PDF : 0 Pages | |||
STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220,
D²PAK, I²PAK
Unit
TO-220FP
VGS
ID
ID
IDM (2)
PTOT
IAR
EAS
dv/dt (3)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 42 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V
± 25
V
42
42 (1)
A
26.5
26.5 (1)
A
168
168 (1)
A
250
40
W
11
A
960
mJ
15
V/ns
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max(1)
30
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
0.50
62.5
3.1
°C/W
62.5 °C/W
°C/W
Doc ID 022849 Rev 4
3/22
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