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BD544 View Datasheet(PDF) - Power Innovations

Part Name
Description
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BD544
Power-Innovations
Power Innovations Power-Innovations
BD544 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD544
-40
Collector-emitter
V(BR)CEO breakdown voltage
IC = -30 mA
(see Note 4)
IB = 0
BD544A
BD544B
BD544C
-60
-80
-100
VCE = -40 V
VBE = 0
BD544
-0.4
Collector-emitter
ICES cut-off current
VCE = -60 V
VCE = -80 V
VBE = 0
VBE = 0
BD544A
BD544B
-0.4
-0.4
VCE = -100 V
VBE = 0
BD544C
-0.4
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB = 0
IB = 0
BD544/544A
BD544B/544C
-0.7
-0.7
Emitter cut-off
IEBO current
VEB = -5 V
IC = 0
-1
Forward current
hFE
transfer ratio
VCE = -4 V
VCE = -4 V
VCE = -4 V
IC = -1 A
IC = -3 A
IC = -5 A
60
(see Notes 4 and 5)
40
15
Collector-emitter
IB = -0.3 A
IC = -3 A
-0.5
VCE(sat) saturation voltage
IB =
-1 A
IC = -5 A
(see Notes 4 and 5)
-0.5
IB = -1.6 A
IC = -8 A
-1
Base-emitter
VBE
voltage
VCE = -4 V
IC = -5 A
(see Notes 4 and 5)
-1.4
Small signal forward
hfe
current transfer ratio VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
|hfe|
Small signal forward
current transfer ratio
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton
Turn-on time
toff
Turn-off time
IC = -6 A
VBE(off) = 4 V
IB(on) = -0.6 A
RL = 5
IB(off) = 0.6 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.4
µs
0.7
µs
PRODUCT INFORMATION
2
 

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