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JAN1N5814R View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
View to exact match
JAN1N5814R
Microsemi
Microsemi Corporation Microsemi
JAN1N5814R Datasheet PDF : 1 Pages
1
TECHNICAL DATA
FAST RECOVERY POWER RECTIFIER
Qualified per MIL-PRF-19500/478
Devices
1N5812
1N5812R
1N5814
1N5814R
1N5815
1N5815R
1N5816
1N5816R
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
1N5812
1N5812R
1N5814
1N5814R
1N5816
1N5816R
Unit
Reverse Voltage
VR
50
Working Peak Reverse Voltage
VRWM
50
Average Forward Current TC = +1000C (1)
IO
Forward Current Surge Peak TC = +1000C
tp = 8.3 ms
IFSM
100
150 Vdc
100
150 Vpk
20
Adc
400
Adc
Reverse Recovery Time
trr
35
ηs
Operating & Storage Junction Temperature TJ, Tstg
-65 to +175
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.5
1) Derate linearly 250 mA/0C from +1000C to +1500C, & 300 mA/0C above +1500C
0C/W
DO-203AA
(DO-4)
ELECTRICAL CHARACTERISTICS
Characteristics
Thermal Impedance
IH rated IO; tH 250ms; 10 mA IM 100 mA; tMD = 250 µs (max)
Forward Voltage
tp 8.3 ms, duty cycle 2.0% pulsed
IF = 10 A (pk)
IF = 20 A (pk)
Reverse Current
VR = Rated VR (See 1.3 of MIL-PRF-19500/478)
Breakdown Voltage
IR = 100 µAdc
IR = 100 µAdc
1N5812, R
1N5814, R
IR = 100 µAdc
1N5816, R
Junction Capacitance
VR = 10 Vdc, VSIG = 50 mVdc (p-p) max, f = 1.0 MHz
Forward Recovery Voltage
tp 20 ηs, tr = 8.0 ηs; IF = 1,000 mA
Forward Recovery Time
IF = 1,000 mA
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
ZθJX
VF1
VF2
IR
V(BR)
CJ
VFR
trr
Min.
*See appendix A for
package outline
Max. Unit
1.35
0C/W
0.860
0.950
10
Vdc
Vpk
µAdc
60
Vdc
110
160
300
pF
V(pk)
2.2
15
ηs
120101
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