SGB15N60HS View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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SGB15N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

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Figure A. Definition of switching times

SGB15N60HS

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Published by

Power Semiconductors

10

Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH

an d Stray capacity Cσ =40pF.

Rev 2.3 Oct 06

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