RJK60S3DPD-00J2 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
RJK60S3DPD-00J2 Datasheet PDF : 8 Pages
| |||
RJK60S3DPD
600V - 12A - SJ MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0731EJ0300
Rev.3.00
Oct 12, 2012
Features
Superjunction MOSFET
Low on-resistance
RDS(on) = 0.35 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
D
4
12 3
1. Gate
G
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Maximum duty cycle D = 0.75.
3. STch = 25C, Tch 150C
4. Value at Tc = 25C
Symbol
VDSS
VGSS
ID Note1,2
ID Note1,2
ID
Note1
(pulse)
IDR Note1
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note4
ch-c
Tch
Tstg
Ratings
600
+30, 20
12.0
7.6
24
12
24
3
0.49
73.5
1.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0731EJ0300 Rev.3.00
Oct 12, 2012
Page 1 of 7
|
|
Share Link: 