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STF5N95K5 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STF5N95K5 N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK ST-Microelectronics
STMicroelectronics ST-Microelectronics
STF5N95K5 Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Electrical characteristics
Table 7: Switching times
Test conditions
VDD= 475 V, ID = 1.75 A,
RG = 4.7 Ω
VGS = 10 V
(see Figure 18: "Test circuit for
resistive load switching times"
and Figure 23: "Switching time
waveform")
Min. Typ. Max. Unit
-
12
-
ns
-
16
-
ns
-
32
-
ns
-
25
-
ns
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
3.5 A
ISDM
Source-drain current
(pulsed)
-
14 A
VSD(1) Forward on voltage
ISD = 3.5 A, VGS = 0 V
-
1.5 V
trr
Reverse recovery time
ISD = 3.5 A, di/dt = 100 A/µs, - 330
ns
Qrr
Reverse recovery charge
VDD = 60 V
(see Figure 20: "Test circuit
-
2.2
µC
for inductive load switching
IRRM Reverse recovery current and diode recovery times")
- 13
A
trr
Reverse recovery time
ISD = 3.5 A, di/dt = 100 A/µs, - 525
ns
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C
(see Figure 20: "Test circuit
-
3.2
µC
for inductive load switching
IRRM Reverse recovery current and diode recovery times")
- 12
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
V (BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1 mA, ID= 0 A
Min Typ. Max Unit
30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID024639 Rev 4
5/26
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