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STP5N95K5 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STP5N95K5 Datasheet PDF : 26 Pages
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STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Value
Parameter
DPAK, TO-220,
IPAK
TO-220FP
Unit
VGS
ID
ID
IDM(2)
PTOT
dv/dt (3)
dv/dt (4)
VISO
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current pulsed
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC=25 °C)
Operating junction temperature range
Storage temperature range
±30
3.5
3.5 (1)
2.2
2.2 (1)
14
70
25
4.5
50
2500
-55 to 150
V
A
A
A
W
V/ns
V/ns
V
°C
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 3.5 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS
(4)VDS ≤ 640 V
Symbol
Rthj-case
Rthj-amb
Rthj-pcb (1)
Table 3: Thermal data
Parameter
Value
DPAK TO-220FP TO-220
Thermal resistance junction-case
1.47 5
1.47
Thermal resistance junction-ambient
62.5
Thermal resistance junction-pcb
50
IPAK
100
Unit
°C/W
°C/W
°C/W
Notes:
(1)When mounted on 1 inch² FR-4, 2 Oz copper board
Symbol
Table 4: Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
1
70
Unit
A
mJ
DocID024639 Rev 4
3/26
 

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