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C2611 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name
Description
View to exact match
C2611
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd Jiangsu
C2611 Datasheet PDF : 2 Pages
1 2
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
C 2611 TRANSISTOR (NPN)
FEATURE
power switching applications
TO-126
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector -Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
0.2
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~150
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
tS
tf
IC= 100μA, IE=0
IC= 1mA , IB=0
IE= 100μ A , IC=0
VCB= 600V, IE=0
VCE= 400V, IB=0
VEB=7V, IC=0
VCE=20V, IC=20mA
VCE=10V, IC= 0.25mA
IC= 50mA, IB= 10mA
IC= 100mA, IB= 20mA
IC= 50mA, IB=10mA
VCE=20V,IC=20mA
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
Min Typ
600
400
7
10
5
8
Max Unit
V
V
V
100
μA
200
μA
100
μA
40
0.5
V
0.6
V
1.2
V
MHz
0.3
μs
1.5
μs
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
www.cj-elec.com
1
C,Oct,2014
 

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