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8F01 View Datasheet(PDF) - Toshiba

Part Name
Description
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8F01 Datasheet PDF : 0 Pages
TPCP8F01
TOSHIBA Multi-chip Device
Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
TPCP8F01
Swtching Applications
Load Switch Applications
Multi-chip discrete device; built-in PNP Transistor for
main switch and N-ch MOS FET for drive
0.33±0.05
0.05 M A
8
5
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
(PNP Transistor)
Low collector-emitter saturation: VCE (sat) = 0.19 V (max)
(PNP Transistor)
High-speed switching: tf = 40 ns (typ.) (PNP Transistor)
Absolute Maximum Ratings (Ta = 25°C)
Transistor
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
7
V
Collector current
DC
IC
Pulse
ICP
3.0
A
5.0
Base current
IB
250
mA
Collector power dissipation
PC (Note 1)
1.0
W
Junction temperature
Tj
150
°C
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28 +-00..111
1.12+-00..1123
1.12+-00..1123
1.Source
2.Collector
3.Collector
4.Collector
5.Emitter
6.Base
7.Gate
8.Drain
0.28
+0.1
-0.11
JEDEC
JEITA
TOSHIBA
2-3V1B
Weight : 0.017g (Typ.)
MOS FET
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Channel temperature
DC
Pulse
VDSS
VGSS
ID
IDP
Tj
20
V
±10
V
100
mA
200
150
°C
Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm2)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13
 

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