datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

STP3NA80FI View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STP3NA80FI Datasheet PDF : 0 Pages
STP3NA80/FI
THERMAL DATA
Rthj-case
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
0.8
ISOWATT220
3. 12
6 2. 5
0. 5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
3.1
48
2
2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 30 V
Min.
800
Typ.
Max.
Unit
V
250
µA
1000 µA
± 100 nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
R esist anc e
VGS = 10V ID = 1.5 A Tc = 100oC
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2. 25
3.1
Typ.
3
3.5
Max.
3. 75
4.5
9
Unit
V
A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 1. 5 A
Min.
1.5
Typ.
3
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
730 950
pF
85
115
pF
20
30
pF
2/10
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]