RSS100N03 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
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RSS100N03 Datasheet PDF : 4 Pages
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Transistor
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W ∗
RSS100N03
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
−
10 µA VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
−
−
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
10 µA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
−
2.5
V VDS=10V, ID=1mA
− 9.5 13.0
ID=±10A, VGS=10V
∗
Static drain-source on-starte
resistance
RDS (on)
−
12.5 17.2 mΩ ID=±10A, VGS=4.5V
∗
− 13.5 18.5
ID=±10A, VGS=4V
∗
Forward transfer admittance Yfs 6.0 −
−
S ID=±10A, VDS=10V
∗
Input capacitance
Ciss
− 1070 −
pF VDS=10V
Output capacitance
Coss
− 320 −
pF VGS=0V
Reverse transfer capacitance Crss
− 200 − pF f=1MHz
Tum-on delay time
td (on)
−
10
−
ns ID=5A, VDD 15V
∗
Rise time
tr
−
16
−
ns VGS=10V
∗
Tum-off delay time
td (off)
−
55
−
ns RL=3.0Ω
∗
Fall time
tf
−
24
−
ns RGS=10Ω
∗
Total gate charge
Qg
−
14
−
nC VDD 15V
∗
Gate-source charge
Qgs
−
2.7
−
nC VGS=5V
∗
Gate-drain charge
Qgd
− 5.3 − nC ID=±10A
∗
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
−
− 1.2 V IS=6.4A, VGS=0V
∗
zElectrical characteristic curves
10000
Ta=25°C
f=1MHz
VCE=0V
1000
Ciss
Coss
100
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
tf
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
100 td(off)
tr
10
td(on)
1
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
8
Ta=25°C
7 VDD=15V
ID=10A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
2/3
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