Y100N10E View Datasheet(PDF) - ON Semiconductor
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Description
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Y100N10E Datasheet PDF : 7 Pages
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MTY100N10E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 μA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 50 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 100 Adc)
(ID = 50 Adc, TJ = 125°C)
Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 100 Adc, VGS = 0 Vdc)
(IS = 100 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min
Typ
Max
Unit
100
−
−
115
−
Vdc
−
mV/°C
μAdc
−
−
10
−
−
200
−
−
100
nAdc
2.0
−
−
7
4
Vdc
−
mV/°C
−
−
0.011 Ohm
Vdc
−
1.0
1.2
−
−
1.0
30
49
−
mhos
−
7600 10640
pF
−
3300
4620
−
1200
2400
−
48
96
ns
−
490
980
−
186
372
−
384
768
−
270
378
nC
−
50
−
−
150
−
−
118
−
Vdc
−
1
1.2
−
0.9
−
−
145
−
ns
−
90
−
−
55
−
−
2.34
−
μC
−
4.5
−
nH
−
13
−
nH
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