Y100N10E View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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Y100N10E Datasheet PDF : 7 Pages
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MTY100N10E
Preferred Device
Power MOSFET
100 Amps, 100 Volts
N−Channel TO−264
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain−to−source diode with fast recovery
time. Designed for high voltage, high speed switching applications in
power supplies, converters, PWM motor controls, and other inductive
loads. The avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous @ TC = 25°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
100 Vdc
100 Vdc
± 20 Vdc
± 40 Vpk
100 Adc
300 Apk
300 Watts
2.38 W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak
IL = 100 Apk, L = 0.1 mH, RG = 25 Ω )
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
250 mJ
RθJC
RθJA
TL
0.42 °C/W
40
260 °C
http://onsemi.com
100 AMPERES
100 VOLTS
RDS(on) = 11 mΩ
N−Channel
D
G
S
1
23
TO−264
CASE 340G
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
MTY100N10E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTY100N10E
TO−264
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MTY100N10E/D
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