FQP11P06 View Datasheet(PDF) - Fairchild Semiconductor
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FQP11P06 Datasheet PDF : 8 Pages
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Typical Characteristics
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
101
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.8
0.6
0.4
0.2
0.0
0
V = - 10V
GS
V = - 20V
GS
※ Note : TJ = 25℃
10
20
30
40
50
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
C
oss
Ciss
※ Notes :
600
1. VGS = 0 V
2. f = 1 MHz
400
Crss
200
0
10-1
100
101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
175℃
100 25℃
10-1
2
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
175℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8
V = -48V
DS
6
4
2
※ Note : ID = -11.4 A
0
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A4. May 2001
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