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SPI20N65C3 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
SPI20N65C3
Infineon
Infineon Technologies Infineon
SPI20N65C3 Datasheet PDF : 0 Pages
SPP20N65C3, SPA20N65C3
SPI20N65C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
0.6 K/W
-
-
3.6
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650
-
-V
Drain-Source avalanche
V(BR)DS VGS=0V, ID=7A
- 730 -
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=1000µA, VGS=VDS 2.1
VDS=600V, VGS=0V,
Tj=25°C
-
Tj=150°C
-
3 3.9
µA
0.1 1
- 100
Gate-source leakage current
IGSS
VGS=20V, VDS=0V
-
- 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=13.1A
Tj=25°C
- 0.16 0.19
Tj=150°C
- 0.43 -
Gate input resistance
RG
f=1MHz, open drain
-
0.54
-
Rev. 3.1
Page 2
2009-12-01
 

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