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MTP50N06V View Datasheet(PDF) - ON Semiconductor

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Description
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MTP50N06V Datasheet PDF : 8 Pages
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MTP50N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
69
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
µAdc
10
100
IGSS
100
nAdc
VGS(th)
2.0
2.7
4.0
Vdc
3.0
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 21 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 42 Adc)
(ID = 21 Adc, TJ = 150°C)
Forward Transconductance (VDS = 6.25 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 25 Vdc, ID = 42 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 42 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 42 Adc, VGS = 0 Vdc)
(IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
0.025 0.028 Ohm
Vdc
1.4
1.7
1.6
16
23
mhos
1644
2320
pF
465
660
112
230
12
20
ns
122
250
64
110
54
90
47
70
nC
9
21
16
Vdc
1.06
2.5
0.99
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 42 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
84
ns
73
11
0.28
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
LD
nH
3.5
4.5
Internal Source Inductance
LS
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
7.5
nH
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