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BD138 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
BD138 PNP Epitaxial Silicon Transistor Fairchild
Fairchild Semiconductor Fairchild
BD138 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Characteristics
100
90
80
70
60
50
40
30
20
10
0
-10
VCE = -2V
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
-1.1
-1.0
-0.9
VIBCE(=sa1t0) IB
-0.8
-0.7
V BE(on=) -5V
V CE
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-1E-3
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
-500
-450
-400
-350
-300
-250
-200
-150
-100
-50
-0
-1E-3
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
-10
IC MAX. (Pulsed)
IC MAX. (Continuous)
-1
10us
-0.1
-0.01
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000
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