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BD138 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
BD138 PNP Epitaxial Silicon Transistor Fairchild
Fairchild Semiconductor Fairchild
BD138 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD136
: BD138
: BD140
VCEO
Collector-Emitter Voltage
: BD136
: BD138
: BD140
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
1
TO-126
1. Emitter 2.Collector 3.Base
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
- 1.5
- 3.0
- 0.5
12.5
1.25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BD136
IC = - 30mA, IB = 0
- 45
V
: BD138
- 60
V
: BD140
- 80
V
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
hFE3
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
VCB = - 30V, IE = 0
VEB = - 5V, IC = 0
VCE = - 2V, IC = - 5mA
25
VCE = - 2V, IC = - 0.5A
25
VCE = - 2V, IC = - 150mA 40
IC = - 500mA, IB = - 50mA
VCE = - 2V, IC = - 0.5A
- 0.1 µA
- 10 µA
250
- 0.5 V
-1
V
hFE Classificntion
Classification
hFE3
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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