2SC2735 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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2SC2735

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC2735

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

30

V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞

20

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10μA ; IC= 0

3

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

1.0

V

0.5 μA

hFE

DC Current Gain

IC= 10mA ; VCE= 10V

40

fT

Current-Gain—Bandwidth Product

IC= 10mA ; VCE= 10V

600 1200

MHz

COB

Output Capacitance

CG

Conversion Gain

NF

Noise Figure

VOSC

Oscillating output voltage

IE= 0 ; VCB= 10V;f= 1.0MHz

IC= 2mA ; VCC= 12V;f= 200MHz

fOSC= 230MHz(0dBm)

IC= 2mA ; VCC= 12V;f= 200MHz

fOSC= 230MHz(0dBm)

IC= 7mA;VCC= 12V;fOSC= 300MHz

0.85 1.5 pF

21

dB

6.5

dB

210

mV

VOSC

Oscillating output voltage

IC= 7mA;VCC= 12V;fOSC= 930MHz

130

mV

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