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JAN1N5521BUR View Datasheet(PDF) - Microsemi Corporation

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Description
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JAN1N5521BUR
Microsemi
Microsemi Corporation Microsemi
JAN1N5521BUR Datasheet PDF : 3 Pages
1 2 3
SCOTTSDALE DIVISION
1N5518B thru 1N5546B-1 DO-35
Low Voltage Avalanche
500 mW Zener Diodes DO-35
CIRCUIT AND GRAPHS
Noise density, (ND) is specified in microvolts rms per
square-root-hertz (µV/ Hz). Actual measurement is
performed using a 1 kHz to 3 kHz frequency bandpass
filter with a constant Zener test current (IZT) at 25oC
ambient temperature.
At zero volts
At –2 volts (VR)
FIGURE 1
Noise Density Measurement Circuit
TL – Lead Temperature (oC) 3/8” from body
or TA on FR4 PC Board
FIGURE 2 – Power Derating Curve
ZENER VOLTAGE VZ
FIGURE 3
Capacitance vs. Zener Voltage
(TYPICAL)
PACKAGE DIMENSIONS
FIGURE 4
Zener Diode Characteristics and Symbol Identification
All dimensions in: INCH
mm
Copyright 2003
11-12-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
 

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