MMBT2222AT View Datasheet(PDF) - Weitron Technology

Part Name

Description

View to exact match

MMBT2222AT

Plastic-Encapsulate Transistors NPN Silicon

Weitron Technology 

Plastic-Encapsulate Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

THERMAL CHARACTERISTICS

Characteristics

Total Device Dissipation FR-5 Board (1)

TA=25 C

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

DEVICE MARKING

MMBT2222AT=1P

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

VCEO

VCBO

VEBO

IC

Symbol

PD

RθJA

TJ,Tstg

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)(2)

Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)

Collector Cutoff Current (VCB= 70 Vdc, IE=0)

Emitter Cutoff Current (VEB= 3 Vdc, IC=0)

1.FR-5=1.0 x 0.75 x 0.062 in

2. Pulse Test:Pulse Width=300 us, Duty Cycle <_2.0%

MMBT2222AT

COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SOT-523(SC-75)

Value

40

75

6.0

600

Unit

Vdc

Vdc

Vdc

mAdc

Max

Unit

150

mW

833

C/W

-55 to +150

C

Symbol

Min

Max

Unit

V(BR)CEO 40

V(BR)CBO 75

V(BR)EBO 6.0

ICBO

-

IEBO

-

-

Vdc

-

Vdc

-

Vdc

0.1

nAdc

0.1

nAdc

WEITRON

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