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BF1108 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
BF1108
NXP
NXP Semiconductors. NXP
BF1108 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008
Product data sheet
1. Product profile
CAUTION
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
I Various RF switching applications such as:
N Passive loop through for VCR tuner
N Transceiver switching
1.4 Quick reference data
Table 1.
Symbol
Lins(on)
ISLoff
RDSon
VGS(p)
Quick reference data
Parameter
Conditions
Min Typ
on-state insertion loss RS = RL = 50 ; f 1 GHz; [1] -
-
VSK = VDK = 0 V; IF = 0 mA
off-state isolation
RS = RL = 50 ; f 1 GHz;
VSK = VDK = 5 V; IF = 1 mA
30 -
drain-source on-state VKS = 0 V; ID = 1 mA
resistance
-
12
gate-source pinch-off VDS = 1 V; ID = 20 µA
voltage
-
3
Max Unit
2 dB
-
dB
20
4 V
[1] IF = diode forward current.
 

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