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STD8NM60ND View Datasheet(PDF) - STMicroelectronics

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STD8NM60ND Datasheet PDF : 17 Pages
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STx8NM60ND
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18,
Figure 23
Min.
Typ. Max. Unit
9
ns
22
ns
37
ns
22
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, VGS = 0
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V,
Figure 20
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj=150°C
Figure 20
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
120
0.49
8
Max. Unit
7
A
28 A
1.3 V
ns
µC
A
170
ns
0.75
µC
9
A
5/17
 

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