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Part Name :

HUF76609D3T View Datasheet(PDF) - Intersil

Part NameHUF76609D3T Intersil
Intersil Intersil
Description10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76609D3T Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HUF76609D3, HUF76609D3S
Typical Performance Curves (Continued)
100
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
0.1
SINGLE PULSE
TJ
TC
=
=
MAX RATED
25oC
1ms
10ms
1
10
100
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
15
10
5
TJ = 175oC
TJ = 25oC
0
TJ = -55oC
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
20
VGS = 10V
VGS = 5V
15
VGS = 4V
VGS = 3.5V
10
5
0
0
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
200
ID = 10A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
180
TC = 25oC
160
ID = 4A
140
ID = 7A
120
100
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 10V, ID = 10A
2.0
1.5
1.0
0.5
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
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Features
• Ultra Low On-Resistance
   - rDS(ON) = 0.160Ω, VGS = 10V
   - rDS(ON) = 0.165Ω, VGS = 5V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER© Electrical Models
   - Spice and SABER© Thermal Impedance Models
   - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

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