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Part Name :

HUF76609D3T View Datasheet(PDF) - Intersil

Part NameHUF76609D3T Intersil
Intersil Intersil
Description10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76609D3T Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HUF76609D3, HUF76609D3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
ID = 250µA, VGS = 0V, TC = -40oC (Figure 12)
VDS = 95V, VGS = 0V
VDS = 90V, VGS = 0V, TC = 150oC
VGS = ±16V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 10A, VGS = 10V (Figures 9, 10)
ID = 7A, VGS = 5V (Figure 9)
ID = 7A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-251 and TO-252
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 50V, ID = 7A
VGS = 4.5V, RGS = 20
(Figures 15, 21, 22)
VDD = 50V, ID = 10A
VGS = 10V,
RGS = 24
(Figures 16, 21, 22)
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 50V,
ID = 7A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
VSD
Reverse Recovery Time
Reverse Recovered Charge
trr
QRR
TEST CONDITIONS
ISD = 7A
ISD = 4A
ISD = 7A, dISD/dt = 100A/µs
ISD = 7A, dISD/dt = 100A/µs
2
MIN TYP MAX UNITS
100
-
-
V
90
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
1
-
3
V
-
0.130 0.160
-
0.135 0.165
-
0.140 0.168
-
-
3.06 oC/W
-
-
100 oC/W
-
-
77
ns
-
10
-
ns
-
41
-
ns
-
30
-
ns
-
28
-
ns
-
-
87
ns
-
-
36
ns
-
6
-
ns
-
18
-
ns
-
55
-
ns
-
39
-
ns
-
-
141
ns
-
13
16
nC
-
7.3
8.8
nC
-
0.5
0.6
nC
-
1.4
-
nC
-
3.4
-
nC
-
425
-
pF
-
75
-
pF
-
22
-
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.0
V
-
-
92
ns
-
-
273
nC
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Features
• Ultra Low On-Resistance
   - rDS(ON) = 0.160Ω, VGS = 10V
   - rDS(ON) = 0.165Ω, VGS = 5V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER© Electrical Models
   - Spice and SABER© Thermal Impedance Models
   - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

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