1 Power dissipation
P tot = f(T C); V GS ≥ 6 V
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
2 Drain current
I D = f(T C); V GS ≥ 6 V; SMD
300
140
250
120
100
200
80
150
60
100
40
50
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0; SMD
parameter: t p
1000
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
101
1 µs
100
10 µs
100 µs
100
0.5
10-1
0.1
1 ms
0.05
10
10-2 0.01
1
0.1
Rev. 1.0
1
10
V DS [V]
single pulse
10-3
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-03-23