IPB120N06S4-H1 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
IPB120N06S4-H1 Datasheet PDF : 9 Pages
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
2.1 mΩ
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N06S4-H1
IPI120N06S4-H1
IPP120N06S4-H1
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N06H1
4N06H1
4N06H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=10V
Value
Unit
120
A
T C=100°C, V GS=10V2)
120
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2)
E AS
I D=60A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
480
1060
mJ
120
A
±20
V
250
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2009-03-23
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