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G10N60A View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
G10N60A
Infineon
Infineon Technologies Infineon
G10N60A Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SGP10N60A, SGB10N60A
SGW10N60A
100ns
td(off)
tf
td(on)
tr
10ns
0A
5A 10A 15A 20A 25A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 2 5 ,
Dynamic test circuit in Figure E)
100ns td(off)
tf
td(on)
10ns tr
0
20
40
60
80
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 10A,
Dynamic test circuit in Figure E)
100ns
td (o ff)
td(on)
tf
tr
10ns
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 10A, RG = 2 5,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
-50°C 0°C
m ax.
ty p .
m in.
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
6
Jul-02
 

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