G10N60A View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
G10N60A Datasheet PDF : 12 Pages
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SGP10N60A, SGB10N60A
SGW10N60A
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP10N60A
SGB10N60A
SGW10N60A
VCE
IC
VCE(sat)
Tj
Package
600V 10A
2.3V
150°C TO-220AB
TO-263AB
TO-247AC
Ordering Code
Q67040-S4457
Q67040-S4507
Q67040-S4510
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
Unit
600
V
A
20
10.6
40
40
±20
V
70
mJ
10
µs
92
W
-55...+150
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
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