W25Q80DVZPI View Datasheet(PDF) - Winbond

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W25Q80DVZPI

3V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

Winbond 

W25Q80DV

Sector Erase (20h)

The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of

all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase

Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low

and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The

Sector Erase instruction sequence is shown in figure 21a

The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done

the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase

instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase

cycle is in progress, the Read Status Register instruction may still be accessed for checking the status

of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is

finished and the device is ready to accept other instructions again. After the Sector Erase cycle has

finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase

instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,

BP2, BP1, and BP0) bits (see Status Register Memory Protection table).

/CS

CLK

DI

(IO0)

DO

(IO1)

Mode 3

0

Mode 0

* = MSB

123456789

29 30 31

Instruction (20h)

24-Bit Address

23 22

*

High Impedance

210

Mode 3

Mode 0

Figure 21a. Sector Erase Instruction Sequence Diagram

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Publication Release Date:July 21, 2015

Prelimry-Revision G

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