T610T-8FP View Datasheet(PDF) - STMicroelectronics
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T610T-8FP Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
T610T-8FP
Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
IT(rms)
ITSM
I²t
VDRM,
VRRM
VDSM,
VRSM
dI/dt
IGM
PG(AV)
Tstg
Tj
TL
Vins
On-state rms current (full sine wave)
Tc = 117 °C
6
A
Non repetitive surge peak on-state F = 50 Hz t = 20 ms
45
current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 16.7 ms
47
A
I²t value for fusing, Tj initial = 25 °C
tp = 10 ms
13
A²s
Repetitive surge peak off-state voltage
Tj = 150 °C
600
V
Tj = 125 °C
800
Non repetitive surge peak off-state voltage
tp = 10 ms
900
V
Critical rate of rise of on-state
current IG = 2 x IGT, tr ≤ 100 ns
F = 100 Hz
Peak gate current
tp = 20 µs Tj = 150 °C
Average gate power dissipation
Tj = 150 °C
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
Insulation rms voltage, 1 minute
100
4
1
- 40 to + 150
- 40 to + 150
260
2
A/µs
A
W
°C
°C
kV
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
Symbol
Test conditions
Quadrant
Value
Unit
IGT
VD = 12 V, RL = 30 Ω
Min.
0.5
I - II - III
mA
Max.
10
VGT
VD = 12 V, RL = 30 Ω
I - II - III
Max.
1.3
VGD
VD = VDRM, RL = 3.3 k Ω , Tj = 150 °C I - II - III
Min.
0.2
IH (1)
IT = 500 mA
Max.
15
IL
IG = 1.2 IGT
I - III
II
Max.
20
Max.
25
dV/dt (1)
VD = VR = 536 V, gate open
VD = VR = 402 V, gate open
(dI/dt)c (1) (dV/dt)c = 0.1 V/µs
(dI/dt)c (1) (dV/dt)c = 10 V/µs
1. For both polarities of A2 referenced to A1
Tj = 125 °C
250
Min.
Tj = 150 °C
170
Tj = 125 °C
5.2
Min.
Tj = 150 °C
3.7
Tj = 125 °C
2.7
Min.
Tj = 150 °C
1.2
V
V
mA
mA
mA
V/µs
V/µs
A/ms
A/ms
2/9
DocID025568 Rev 2
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