STP11N52K3 View Datasheet(PDF) - STMicroelectronics
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Description
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STP11N52K3
STMicroelectronics
STP11N52K3 Datasheet PDF : 20 Pages
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Electrical characteristics
STB11N52K3, STF11N52K3, STP11N52K3
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 525 V
drain current (VGS = 0) VDS = 525 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V; VDS=0
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 5 A
Min. Typ. Max. Unit
525
V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
0.41 0.51 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
1400
pF
-
110
- pF
22
pF
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 420 V, VGS = 0
-
83
- pF
Rg
Gate input resistance f=1 MHz open drain
1
3
7
Ω
Qg
Total gate charge
VDD = 420 V, ID = 10 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
51
nC
-
8
- nC
32
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 210 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min. Typ. Max Unit
7
ns
18
ns
-
-
281
ns
42
ns
4/20
Doc ID 018868 Rev 2
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