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G10T60(2007) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
G10T60
(Rev.:2007)
Infineon
Infineon Technologies Infineon
G10T60 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TrenchStop® Series
IGP10N60T
q
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
1.35
K/W
62
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=10A
Tj=25°C
Tj=175°C
IC=0.3mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=10A
min.
600
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.8
4.6
-
-
-
6
none
Unit
max.
-V
2.05
-
5.7
µA
40
1000
100 nA
-S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
VCE=25V,
-
551
- pF
Coss
VGE=0V,
-
24
-
Crss
f=1MHz
-
17
-
QGate
VCC=480V, IC=10A
-
62
- nC
VGE=15V
Internal emitter inductance
LE
TO-220-3-1
-
7
- nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5µs
-
100
-A
VCC = 400V,
Tj = 25°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.3 Sep. 07
 

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