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MBD301G View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MBD301G Silicon Hot-Carrier Diodes Schottky Barrier Diodes ONSEMI
ON Semiconductor ONSEMI
MBD301G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 4:1
D
3
E
1
2
e
TOP VIEW
A
A1
SIDE VIEW
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
HE
3X b
0.25
T
L
L1
VIEW C
SEE VIEW C
c
END VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b
0.37
0.44
0.50
c
0.08
0.14
0.20
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e
1.78
1.90
2.04
L 0.30
0.43
0.55
L1 0.35
0.54
0.69
H E 2.10
T
0°
2.40
−−−
2.64
10°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
2.90
3X
0.90
XXX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
3X 0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
STYLE 1 THRU 5:
CANCELLED
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. ANODE
3. CATHODE−ANODE
3. GATE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
DOCUMENT NUMBER: 98ASB42226B
Electronic versions are uncontrolled except when
STATUS: ON SEMICONDUCTOR STANDARD
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, D20E0S2CRRIePvT. I0ON: SOT−23 (TO−236)
“CONTROLLED COPY” in red.
http://onsemi.com
1
Case Outline Number:
PAGE 1 OFX2XX
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