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MBD301G Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталогеКомпоненты Описаниепроизводитель
MBD301G Silicon Hot-Carrier Diodes Schottky Barrier Diodes ONSEMI
ON Semiconductor ONSEMI
MBD301G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
500
f = 1.0 MHz
2.4
400
2.0
KRAKAUER METHOD
1.6
300
1.2
200
0.8
100
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
1.0
0.1
0.01
0.001
0
TA = 100°C
75°C
25°C
6.0
12
18
24
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
100
10
TA = 85°C
TA = - 40°C
1.0
TA = 25°C
0.1
30
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
SINUSOIDAL
GENERATOR
IF(PEAK)
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
BALLAST
NETWORK
(PADS)
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
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