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MBD301G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
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MBD301G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
V
30
Total Capacitance
(VR = 15 V, f = 1.0 MHz) Figure 1
CT
pF
0.9
1.5
Reverse Leakage
(VR = 25 V) Figure 3
IR
nAdc
13
200
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
Vdc
0.38
0.45
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
Vdc
0.52
0.6
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Package
Shipping
MBD301G
TO92
(PbFree)
5,000 Units / Bulk
MMBD301LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
MMBD301LT3G
SOT23
(PbFree)
10,000 / Tape & Reel
SMMBD301LT3G
SOT23
(PbFree)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
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