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H06N60F View Datasheet(PDF) - Hi-Sincerity Mocroelectronics

Part Name
Description
View to exact match
H06N60F
HSMC
Hi-Sincerity Mocroelectronics HSMC
H06N60F Datasheet PDF : 6 Pages
1 2 3 4 5 6
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 1/6
H06N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
H06N60 Series Pin Assignment
Tab
3
2
1
Tab
3-Lead Plastic TO-263
Package Code: U
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H06N60 Series
G
Symbol:
S
Absolute Maximum Ratings
Symbol
Parameter
ID
Drain to Current (Continuous)
IDM
Drain to Current (Pulsed)
VGS
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
PD
Derate above 25OC
H06N60U (TO-263)
H06N60E (TO-220AB)
H06N60F (TO-220FP)
Tj
Operating Temperature Range
Tstg
Storage Temperature Range
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25OC
(VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25)
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Note: 1. VDD=50V, ID=10A
2. Pulse Width and frequency is limited by Tj(max) and thermal response
Value
6
24
±20
110
110
40
0.58
0.58
0.33
-55 to 150
-55 to 150
250
260
Units
A
A
V
W
W
W
W/°C
W/°C
W/oC
OC
OC
mJ
°C
H06N60U, H06N60E, H06N60F
HSMC Product Specification
 

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