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K04N60(2013) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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K04N60 Datasheet PDF : 13 Pages
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SKP04N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
Conditions
RthJC
RthJCD
RthJA
PG-TO-220-3-1
Max. Value
Unit
2.5
K/W
4.5
62
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=500A
VGE = 15V, IC=4A
Tj=25C
Diode forward voltage
Gate-emitter threshold voltage
VF
VGE(th)
Tj=150C
VGE=0V, IF=4A
Tj=25C
Tj=150C
IC=200A,VCE=VGE
Zero gate voltage collector current ICE S
VCE=600V,VGE=0V
Tj=25C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
IGES
gfs
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=4A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=4A
VGE=15V
VGE=15V,tSC10s
VCC 600V,
Tj 150C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2.0
2.3
1.4
1.25
4
-
-
-
3.1
264
29
17
24
7
40
Unit
max.
-V
2.4
2.8
1.8
1.65
5
A
20
500
100 nA
-S
317 pF
35
20
31 nC
- nH
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 12.06.2013
 

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