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MMBT2222A-2011 View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
MFG CO.
MMBT2222A(2011)
UTC
Unisonic Technologies UTC
MMBT2222A Datasheet PDF : 6 Pages
1 2 3 4 5 6
MMBT2222A
NPN SILICON TRANSISTOR
„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=10μA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=10μA, IC =0
Collector Cutoff Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150°C
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
Base Cutoff Current
IBL
VCE=60V, VEB(OFF)=3.0V
Collector Cutoff Current
ICEO
VCE=60V, VEB(OFF)=3.0V
ON CHARACTERISTICS
IC =0.1mA, VCE=10V
IC =1.0mA, VCE=10V
IC =10mA, VCE=10V
DC Current Gain
hFE
IC =10mA, VCE=10V, Ta= -55°C
IC =150mA, VCE=10V(Note)
IC =150mA, VCE=1.0V(Note)
IC =500mA, VCE=10V(Note)
Collector-Emitter Saturation
Voltage(Note)
VCE(SAT)
IC =150mA, IB=15mA
IC =500mA, IB=50mA
Base-Emitter Saturation
Voltage(Note)
VBE(SAT)
IC =150mA, IB=15mA
IC =500mA, IB=50mA
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Frequency Input Impedance
Re(hje) IC=20mA, VCB=20V, f=300MHz
Transition Frequency
fT
IC =20mA, VCE=20V, f=100MHz
Output Capacitance
Cobo VCB=10V, IE=0, f=100kHz
Input Capacitance
Cibo VEB=0.5V, IC=0, f=100kHz
Collector Base Time Constant
rb'Cc IC=20mA, VCB=20V, f=31.8MHz
Noise Figure
NF
IC=100μA, VCE=10V, Rs=1.0k
f=1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
tD
VCC=30V, VBE(OFF)=0.5V,
Rise Time
tR
IC=150mA, IB1=15mA
Storage Time
tS
Vcc=30V, IC=150mA
Fall Time
tF
IB1= IB2=15mA
Note: Pulse test: Pulse Width 300μs, Duty Cycle 2.0%
MIN TYP MAX UNIT
75
V
40
V
6
V
0.01 µA
10 µA
10 nA
20 nA
10 nA
35
50
75
35
100
300
50
40
0.3
V
1.0
V
0.6
1.2
V
2.0
V
60
300
MHz
8.0 pF
25 pF
150 pS
4.0 dB
10 ns
25 ns
225 ns
60 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R206-019,I
 

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