MMBT2222A View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name

Description

View to exact match

MMBT2222A

Surface Mount Si-Epi-Planar Switching Transistors

Diotec Semiconductor Germany  

MMBT2222 / MMBT2222A

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 150 mA, IB = 15 mA

MMBT2222

VCEsat

MMBT2222A VCEsat

IC = 500 mA, IB = 50 mA

MMBT2222

MMBT2222A

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

VCEsat

VCEsat

IC = 150 mA, IB = 15 mA

MMBT2222

VBEsat

MMBT2222A VBEsat

IC = 500 mA, IB = 50 mA

MMBT2222

VBEsat

MMBT2222A VBEsat

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 50 V, (E open)

VCB = 60 V, (E open)

MMBT2222

ICBO

MMBT2222A ICBO

VCB = 50 V, Tj = 125°C, (E open)

VCB = 60 V, Tj = 125°C, (E open)

MMBT2222

ICBO

MMBT2222A ICBO

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 3 V, (C open)

MMBT2222A IEB0

Gain-Bandwidth Product – Transitfrequenz

VCE = 20 V, IC = 20 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Noise figure – Rauschzahl

VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz MMBT2222A F

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

VCC = 3 V, VBE = 0.5 V

td

IC = 150 mA, IB1 = 15mA

tr

storage time

fall time

VCC = 3 V, IC = 150 mA,

ts

IB1 = IB2 = 15 mA

tf

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking - Stempelung

Min.

Typ.

Max.

–

–

0.4 V

–

–

0.3 V

–

–

1.6 V

–

–

1.0 V

–

–

0.65 V

–

–

–

–

–

1.3 V

1.2 V

2.6 V

2.0 V

–

–

10 nA

–

–

10 nA

–

–

10 µA

–

–

10 µA

–

–-

100 nA

250 MHz

–

–

–

–

8 pF

–

–

25 pf

–

–

4 dB

–

–

10 ns

–

–

25 ns

–

–

225 ns

–

–

60 ns

< 420 K/W 1)

MMBT2709 / MMBT2709A

MMBT2222 = 1B

MMBT2222A = M1P

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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© Diotec Semiconductor AG

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