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MBD301G View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MBD301G Silicon Hot?Carrier Diodes SCHOTTKY Barrier Diodes ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBD301G Datasheet PDF : 5 Pages
1 2 3 4 5
MBD301, MMBD301LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 mA)
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (VR = 25 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
Symbol
V(BR)R
CT
IR
VF
VF
Min
Typ
Max
Unit
30
V
0.9
1.5
pF
13
200
nAdc
0.38 0.45
Vdc
0.52
0.6
Vdc
ORDERING INFORMATION
Device
Package
Shipping
MBD301
TO−92
5000 Units / Bulk
MBD301G
TO−92
(Pb−Free)
5000 Units / Bulk
MMBD301LT1
SOT−23
3000 / Tape & Reel
MMBD301LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBD301LT3
SOT−23
10,000 / Tape & Reel
MMBD301LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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