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J106 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
J106
Vishay
Vishay Semiconductors Vishay
J106 Datasheet PDF : 5 Pages
1 2 3 4 5
J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
10
2 .0
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 10 V, VGS = 0 V
8
1.6
On-Resistance vs. Drain Current
20
TA = 25_C
16
6
rDS
IDSS
1.2
12
VGS(off) = 3 V
4
0.8
2
0.4
0
0
2
4
6
8
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
10
ID = 10 mA
rDS changes X 0.7%/_C
8
0
10
6
VGS(off) = 3 V
5 V
4
8 V
2
0
55 35 15 5 25 45 65 85 105 125
TA Temperature (_C)
Turn-On Switching
tr approximately independent of ID
VDD = 1.5 V, RG = 50 W
VGS(L) = 10 V
8
4
0
10
5 V
8 V
100
ID Drain Current (mA)
1000
Output Characteristics
500
VGS(off) = 5 V
VGS = 0 V
400
0.5 V
300
1.0 V
1.5 V
200
2.0 V
100
2.5 V
3.0 V
0
2
4
6
8
10
VDS Drain-Source Voltage (V)
Turn-Off Switching
20
td(off) independent of device VGS(off)
VDD = 1.5 V, VGS(L) = 10 V
16
tr
td(on) @ ID = 30 mA
8
4
td(on) @ ID = 10 mA
0
0
2
4
6
8
10
VGS(off) Gate-Source Cutoff Voltage (V)
Document Number: 70230
S-04028Rev. D, 04-Jun-01
12
8
4
0
0
tf
VGS(off) = 8 V
td(off)
VGS(off) = 3 V
10
20
30
40
50
ID Drain Current (mA)
www.vishay.com
7-3
 

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