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NTE222 View Datasheet(PDF) - NTE Electronics

Part Name
Description
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NTE222 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
SmallSignal Characteristics (Contd)
Input Capacitance
Ciss VDS = 15V, VG2S = 4V, ID = IDSS,
f = 1MHz
3.3
Reverse Transfer Capacitance
Crss VDS = 15V, VG2S = 4V, ID = 10mA, 0.005 0.03
f = 1MHz
Output Capacitance
Coss
VDS = 15V, VG2S = 4V, ID = IDSS,
f = 1MHz
1.4
Functional Characteristics
Noise Figure
NF VDD = 18V, VGG = 7V, f = 200MHz
VDD = 15V, VG2S = 4V, ID = 10mA,
f = 200MHz
3.5
5.0
Common Source Power Gain
Gps VDD = 18V, VGG = 7V, f = 200MHz 20
28
VDD = 15V, VG2S = 4V, ID = 10mA, 14
f = 200MHz
Bandwidth
Gain Contol GateSupply Voltage
BW VDD = 18V, VGG = 7V, f = 200MHz 7
VDD = 18V, fLO = 245MHz,
4
fRF = 200MHz, Note 5
VGG(GC) VDD = 18V, Gps = 300dB,
0
f = 200MHz, Note 4
12
7
– –2.0
Unit
pF
pF
pF
dB
dB
dB
dB
MHz
MHz
V
Note 4. Gps is defined as the change in Gps from the value at VGG = 7V.
Note 5. Amplitude at input from local oscillator is 3V RMS.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Drain
Gate 2
Gate 1
45°
.040 (1.02)
Source/Case
 

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