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BY229X-200-E3/45 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
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BY229X-200-E3/45
Vishay
Vishay Semiconductors Vishay
BY229X-200-E3/45 Datasheet PDF : 5 Pages
1 2 3 4 5
BY229(X,B)-200 thru BY229(X,B)-800
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0
25
50
75
100 125
150
Case Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
150
125
TL = 75 °C
8.3 ms Single Half Sine-Wave
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
TJ = 150 °C
TJ = 25 °C
10
1
0.1
0.4
TJ = 100 °C
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Document Number: 88540 For technical questions within your region, please contact one of the following:
Revision: 06-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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