BULD125KC View Datasheet(PDF) - Power Innovations Ltd
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BULD125KC Datasheet PDF : 8 Pages
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BULD125KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
30
LD125CHF
TC = 25°C
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
INSTANTANEOUS FORWARD VOLTAGE
LD125CVF
10
TC = 25°C
10
VCE = 1 V
VCE = 5 V
VCE = 10 V
3·0
0.01
0.1
1·0
10
IC - Collector Current - A
Figure 1.
1·0
0·1
0·01
100
0
0·5
1·0
1·5
2·0
2·5
VEC - Instantaneous Forward Voltage - V
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
1.0
LD125CVB
IC = 1.5 A
IB = 0.3 A
0.9
0.8
0.7
0.6
-50 -25
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 3.
PRODUCT INFORMATION
3
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