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BD138 View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
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BD138
UTC
Unisonic Technologies UTC
BD138 Datasheet PDF : 2 Pages
1 2
UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS(Tc=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Sustaining Voltage VCEO(sus)* IC =-30 mA, IB=0
BD136
BD138
BD140
Collector Cut-off Current
ICBO
VCB =-30 V, IE=0
VCB =-30 V, IE=0, Tc = 125°C
Emitter Cut- off Current
IEBO
VEB = -5 V, IC=0
DC Current Gain
hFE1 VCE=-2V, IC =-5 mA,
hFE2 VCE=-2V, IC =-0.5A ,
hFE3 VCE=-2V, IC =-150 mA,
Collector-Emitter Saturation Voltage VCE(sat)* IC =-0.5 A, IB = -0.05 A
Base-Emitter Voltage
VBE*
IC =-0.5 A, VCE =-2 V
* Pulsed: Pulse duration 300 µs, duty cycle 1.5 %
MIN TYP MAX UNIT
-45
V
-60
-80
-0.1
-10 µA
-10 µA
25
25
40
250
-0.5 V
-1 V
CLASSIFICATION OF hFE3
RANK
RANGE
-6
40~100
-10
63~160
-16
100~250
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD 2
QW-R204-013,B
 

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