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BC160 View Datasheet(PDF) -

Part Name
Description
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BC160
 
BC160 Datasheet PDF : 0 Pages
PNP BC160 – BC161
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
-ICES
-VCB0
-VCE0 (*)
-VEB0
-VCE(SAT)
(*)
-VBE (*)
hFE (*)
fT
CCBO
toff
ton
Collector – Cutoff
IE= 0 ;VCES= 40 V
IE= 0 ;VCES= 60 V
BC160
BC161
-
-
Current
IE= 0 ; V
VCES=40 V BC160
Tamb = 150°c VCES=60 V BC161
-
-
Collector – Base
-IC = 100 µA
Breakdown Voltage IE= 0
BC160 40 -
BC161 60 -
Collector – Emitter -IC = 10 mA
BC160 40 -
Breakdown Voltage IB= 0
BC161 60 -
Emitter – Base
-IE= 100 µA
Breakdown Voltage IC= 0
BC160
BC161
5
-
Collector-Emitter
saturation Voltage
-IC= 100 mA , -IB= 10 mA
-IC= 500 mA , -IB= 50 mA
-IC= 1 A, -IB= 100 mA
- 0.1
- 0.35
- 0.6
Base-Emitter Voltage -IC= 1 A , -VCE= 1V
1
-IC= 100 µA , -VCE= 1 V
Gr 10
Gr 16
- 80
- 120
DC Current Gain
-IC= 100 mA , -VCE= 1 V
Gr 10
Gr 16
63 100
100 160
-IC= 1 A , -VCE= 1 V
Gr 10 - 20
Gr 16 - 30
Transition Frequency -IC= 50 mA , -VCE= 10 V
50 -
Collector – base
Capacitance
IE= 0 ; -VCB= 20V
f = 1 MHZ
- 15
Turn-off times
-IC=100 mA
-IB1=-IB2=5 mA
-
-
Turn-on times
-IC=100 Ma
-IB1=1 mA
-
-
100 nA
100 µA
-
-
V
-
-
V
-
V
1
V
1.7
-
-
160
250
-
-
-
- MHZ
30 pF
650 ns
500 ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
18/10/2012
COMSET SEMICONDUCTORS
2/3
 

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