110RKI View Datasheet(PDF) - New Jersey Semiconductor
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Description
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110RKI Datasheet PDF : 3 Pages
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<$E.mL~(2on.auci o'i.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dna.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
40
VDRM^RW max- repetitive
peak and off-state voltage
V
400
110/111RKI
80
800
120
1200
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
WRRM max-
@ Tj = Tj max.
inA
20
On-state Conduction
Parameter
'TIAVI Max- auer39e on-state current
@ Case temperature
'TIRUSI Max- RMS on-sta'e current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
!2Vt Maximum l2\/t for fusing
VT(TO)] Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
r(1
Low level value of on-state
slope resistance
r|2
High level value of on-state
slope resistance
VTU Max. on-state voltage
IH
Maximum holding current
IL
Typical latching current
110/111RKI
110
90
172
2080
2180
1750
1830
21.7
19.8
15.3
14.0
217
Units Conditions
A
•c
A
KA2s
180* conduction, half sine wave
DC @ 83"C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
t=10ms 100%VBRU
t = 8.3ms reapplied
Sinusoidal half wave,
t * 1 Qms No voltage Initial Tj = Tj max.
t - 8.3ms reapplied
t=10ms 100%VRRM
t = 8.3ms reapplied
KA2\'s t = 0.1 to 10ms. no voltage reapplied
0.82
1.02
(16.7% x i x IT(AV) < 1 <* x IT(AV)), Tj = Tj max.
V
(l> nxl^JJ^Tj max.
2.16
1.70
1.57
200
400
(16.7% x it x IT(AV) < I < n x IT(AV)), Tj ^ Tj max.
mSJ
(l^xl^.VTjma,
V I k= 350A, Tj ~ Tj max., 1 = 10ms sine pulse
mA Tj = 25'C, anode supply 6V resistive load
Switching
di/dt
Parameter
Max. non-repetitive rate of nse
of turned-an current
td
Typical delay time
t
Typical turn-off time
110/111RK1
300
1
110
Units Conditions
A/MS
Gate drive 20V, 20ft, tr £ 1 1JS
Tj = Tj max, anode voltage S 80% VDRM
Gate current 1A, di /dt = 1 A/ps
us
Vd = °-87%vORM.V2s'c
ITM = 50A. Tj = Tj max., di/dt = -5A/us, VB = 50V
dv/dt = 20V/M3, Gate 0V 2SH
Quality Semi-Conductors
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